Vishay Siliconix SIHB125N60EF-GE3
- SIHB125N60EF-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 25A D2PAK
- Transistors - FETs, MOSFETs - Single
- SIHB125N60EF-GE3 Gegevensblad
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Cut Tape (CT)
-
Lead free / RoHS Compliant
- 14716
- Spot inventaris/geautoriseerde distributeurs/fabrieksoverschot inventaris
- 1 jaar kwaliteitsborging 》
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Part Number SIHB125N60EF-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 600V 25A D2PAK |
Package Cut Tape (CT) |
Series EF |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D²PAK (TO-263) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 179W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 25A (Tc) |
Rds On (Max) @ Id, Vgs 125mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 1533 pF @ 100 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
SIHB125N60EF-GE3 Garanties
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• Gegarandeerde kwaliteit
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