Vishay Siliconix SI7464DP-T1-GE3
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- SI7464DP-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 200V 1.8A PPAK SO-8
- Transistors - FETs, MOSFETs - Single
- SI7464DP-T1-GE3 Gegevensblad
- PowerPAK® SO-8
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 21364
- Spot inventaris/geautoriseerde distributeurs/fabrieksoverschot inventaris
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Bezorgdiensten:
Betalingsmethoden:
| Part Number SI7464DP-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 200V 1.8A PPAK SO-8 |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case PowerPAK® SO-8 |
| Supplier Device Package PowerPAK® SO-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1.8W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs 240mOhm @ 2.8A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds - |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case PowerPAK® SO-8 |
SI7464DP-T1-GE3 Garanties
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