Vishay Siliconix SI4425DDY-T1-GE3
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- SI4425DDY-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 30V 19.7A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4425DDY-T1-GE3 Gegevensblad
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 16133
- Spot inventaris/geautoriseerde distributeurs/fabrieksoverschot inventaris
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Bezorgdiensten:
Betalingsmethoden:
| Part Number SI4425DDY-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 30V 19.7A 8SO |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package 8-SOIC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 19.7A (Tc) |
| Rds On (Max) @ Id, Vgs 9.8mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2610 pF @ 15 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-SOIC (0.154\", 3.90mm Width) |
SI4425DDY-T1-GE3 Garanties
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