Vishay Siliconix SI2319DS-T1-E3
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- SI2319DS-T1-E3
- Vishay Siliconix
- MOSFET P-CH 40V 2.3A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2319DS-T1-E3 Gegevensblad
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
-
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Bezorgdiensten:
Betalingsmethoden:
| Part Number SI2319DS-T1-E3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 40V 2.3A SOT23-3 |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package SOT-23-3 (TO-236) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 750mW (Ta) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs 82mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 20 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-236-3, SC-59, SOT-23-3 |
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