IRFB59N10DPBF

Infineon Technologies IRFB59N10DPBF

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  • IRFB59N10DPBF
  • Infineon Technologies
  • MOSFET N-CH 100V 59A TO220AB
  • Transistors - FETs, MOSFETs - Single
  • IRFB59N10DPBF Gegevensblad
  • TO-220-3
  • Tube
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 2994
  • Spot inventaris/geautoriseerde distributeurs/fabrieksoverschot inventaris
  • 1 jaar kwaliteitsborging 》
  • Klik om tarieven te zien
Part Number
IRFB59N10DPBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 59A TO220AB
Package
Tube
Series
HEXFET®
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.8W (Ta), 200W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
59A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3

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Infineon Technologies
Infineon Technologies
Infineon Technologies is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog ...
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