2SK3313(Q)

Toshiba Semiconductor and Storage 2SK3313(Q)

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  • 2SK3313(Q)
  • Toshiba Semiconductor and Storage
  • MOSFET N-CH 500V 12A TO220NIS
  • Transistors - FETs, MOSFETs - Single
  • 2SK3313(Q) Gegevensblad
  • TO-220-3 Full Pack
  • Bulk
  • Lead free / RoHS CompliantLead free / RoHS Compliant
  • 29614
  • Spot inventaris/geautoriseerde distributeurs/fabrieksoverschot inventaris
  • 1 jaar kwaliteitsborging 》
  • Klik om tarieven te zien
Part Number
2SK3313(Q)
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 500V 12A TO220NIS
Package
Bulk
Series
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
40W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Rds On (Max) @ Id, Vgs
620mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2040 pF @ 10 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-220-3 Full Pack

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Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage - Toshiba Semiconductor & Storage offers a broad range of enabling technology solutions that allow OEMs, ODMs, CMs and fabless chip companies to develop advanced integrated products for the computing, ...
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